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| Preliminary data BUZ 104SL-4 SIPMOS (R) Power Transistor * Quad-channel * Enhancement mode * Logic level * Avalanche-rated * dv/dt rated Type BUZ 104SL-4 VDS 55 V ID 3.2 A RDS(on) 0.125 Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 3.2 Unit A ID IDpuls 12.8 TA = 25 C Pulsed drain current one channel active TA = 25 C Avalanche energy, single pulse EAS 52 dv/dt 6 mJ ID = 3.2 A, VDD = 25 V, RGS = 25 L = 10.15 mH, Tj = 25 C Reverse diode dv/dt kV/s IS = 3.2 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C Gate source voltage Power dissipation ,one channel active VGS Ptot 14 2.4 V W TA = 25 C Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Tj Tstg -55 ... + 175 -55 ... + 175 55 / 175 / 56 C Semiconductor Group 1 07/Oct/1997 Preliminary data BUZ 104SL-4 Thermal Characteristics Parameter Symbol min. Thermal resistance, junction - soldering point 1) Thermal resistance, junction - ambient 2) Values typ. max. tbd 62.5 K/W Unit RthJS RthJA - 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70m thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 55 1.6 0.1 10 0.095 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 20 A Zero gate voltage drain current IDSS 0.1 1 100 A VDS = 55 V, VGS = 0 V, Tj = -40 C VDS = 55 V, VGS = 0 V, Tj = 25 C VDS = 55 V, VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS 100 nA 0.125 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 3.2 A Semiconductor Group 2 07/Oct/1997 Preliminary data BUZ 104SL-4 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 3 320 100 55 - S pF 400 125 70 ns 20 30 VDS 2 * ID * RDS(on)max, ID = 3.2 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 3.2 A RG = 16.8 Rise time tr 30 45 VDD = 30 V, VGS = 5 V, ID = 3.2 A RG = 16.8 Turn-off delay time td(off) 35 53 VDD = 30 V, VGS = 5 V, ID = 3.2 A RG = 16.8 Fall time tf 20 0.55 5.3 14 3.27 30 nC 0.85 8 21 V 3 07/Oct/1997 VDD = 30 V, VGS = 5 V, ID = 3.2 A RG = 16.8 Gate charge at threshold Qg(th) Qg(5) - VDD = 40 V, ID 0.1 A, VGS =0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 3.2 A, VGS =0 to 5 V Gate charge total Qg(total) - VDD = 40 V, ID = 3.2 A, VGS =0 to 10 V Gate plateau voltage V(plateau) VDD = 40 V, ID = 3.2 A Semiconductor Group Preliminary data BUZ 104SL-4 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 0.95 50 90 3.2 12.8 V 1.6 ns 75 nC 135 Values typ. max. Unit TA = 25 C Inverse diode direct current, pulsed ISM - TA = 25 C Inverse diode forward voltage VSD trr Qrr VGS = 0 V, IF = 6.4 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/Oct/1997 Preliminary data BUZ 104SL-4 Power dissipation Ptot = (T) Drain current ID = (TC) parameter: VGS 5 V 3.4 A 2.6 W 2.2 RthJC thJA Ptot 2.0 1.8 1.6 1.4 1.2 1.0 ID 2.8 2.4 2.0 1.6 1.2 0.8 0.6 0.4 0.4 0.2 0.0 0 20 40 60 80 100 120 140 C T 180 0.0 0 20 40 60 80 100 120 140 C 180 0.8 TC Semiconductor Group 5 07/Oct/1997 Preliminary data BUZ 104SL-4 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 7.5 A 6.5 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.38 a b Ptot = 2W l jig h kfe d VGS [V] a 2.5 b c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 ID 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 c 0.32 RDS (on) 0.28 0.24 0.20 0.16 c d e f g h i j 0.12 0.08 0.04 VGS [V] = a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 k 10.0 bk l d e gf j kh i 0.5 a 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0.0 1.0 2.0 3.0 4.0 A 5.5 VDS ID Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 45 A ID 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 07/Oct/1997 Preliminary data BUZ 104SL-4 Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 3.2 A, VGS = 5 V 0.34 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 20 A 4.6 V 4.0 0.28 RDS (on) 0.24 VGS(th) 3.6 3.2 2.8 0.20 98% 0.16 2.4 98% 2.0 typ 0.12 0.08 1.6 typ 2% 1.2 0.8 0.04 0.4 0.00 -60 -20 20 60 100 C 180 0.0 -60 -20 20 60 100 C 180 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 2 A C pF Ciss IF 10 1 10 2 Coss 10 0 Crss Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 10 -1 0.0 5 10 15 20 25 30 V 40 VDS 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/Oct/1997 Preliminary data BUZ 104SL-4 Avalanche energy EAS = f (Tj) parameter:ID=3.2A,VDD =25 V RGS =25 , L = 10.15mH 60 Typ. gate charge VGS = (QGate) parameter: ID puls = 3 A 16 V mJ EAS 40 VGS 12 10 30 8 0,2 VDS max 0,8 VDS max 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 C Tj 180 2 4 6 8 10 12 14 16 nC 19 QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 07/Oct/1997 |
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